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EUP7914 CR201 SBN13002 000WD M1602 74ABT TC244 D2382
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 JMnic
Product Specification
Silicon NPN Power Transistors
2SC5124
DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Display horizontal deflection output Switching regulator and general purpose
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 20 5 100 150 -55~150 ae ae UNIT V V V A A A W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5124
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA; RBE= IC=8A;IB=2A IC=8A;IB=2A VCB=1200V; IE=0 VCB=1500V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V IE=-1A ; VCE=12V VCB=10V;f=1MHz 8 4 3 130 9 MHz pF MIN 800 5 1.5 100 1 100 |I |I TYP. MAX UNIT V V V A mA A
SYMBOL V(BR)CEO VCEsat VBEsat ICBO1 ICBO2 IEBO hFE-1 hFE-2 fT COB
Switching times ton tstg tf Turn-on time Storage time Fall time IC=6A;IB1=1.2A; IB2-=-2.4A RL=33.3| ;VCC=200V 0.1 4.0 0.2 |I |I |I s s s
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JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5124
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5124
4


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